GaN growth on porous silicon by MOVPE

Structural and optical characterization of GaN grown on porous silicon substrate by MOVPE

GaN was grown on porous silicon (PS) substrates by Metalorganic Vapour Phase Epitaxy at temperature of 1050 8C. An additional AlN buffer layer is used between GaN and PS. The crystalline quality and surface morphology of GaN films were studied by X-ray diffraction and scanning electron microscope (SEM), respectively. Preferential growth of hexagonal GaN with h00.1i direction is observed and is ...

Establishing a Two Step FACELO Process in HVPE

In order to reduce the effort needed to create self-separated, freestanding gallium nitride (GaN) layers by thick growth in hydride vapor phase epitaxy (HVPE), we established a two-step facet-controlled lateral overgrowth (FACELO) process in HVPE. Just as for the metalorganic vapor phase epitaxy (MOVPE) FACELO process, the template is produced by MOVPE growth directly on sapphire. This initial ...

MOVPE and photoluminescence of narrow band gap (0.77 eV) InN on GaN/sapphire by pulsed growth mode

Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire

Metalorganic vapor phase epitaxy (MOVPE) nucleation studies of GaN on planar sapphire and nanopatterned AGOG (Deposition of Aluminum, Growth of Oxide, and Grain growth) sapphire substrates were conducted. The use of abbreviated GaN growth mode, which utilizes a process of using 15 nm low-temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of ...

Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

Selective and lateral overgrowth by Metal Organics Vapour Phase Epitaxy (MOVPE) was carried out until coalescence to produce smooth and optically flat thick GaN layers. A GaN epitaxial layer is first grown using atmospheric pressure Metalorganic Vapour Phase Epitaxy on a {0001} Al2O3. substrate. Then a 30Å silicon nitride dielectric film is deposited in-situ by reaction of silane and ammonia to...